METHOD FOR IMPROVING THE EFFECT OF GOI IN SEMICONDUCTOR DEVICE FABRICATION,申请号KR20030052579-传众专利搜索

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发明名称	METHOD FOR IMPROVING THE EFFECT OF GOI IN SEMICONDUCTOR DEVICE FABRICATION
摘要
申请公布号	KR100489539(B1)	申请公布日期	2005.05.16
申请号	KR20030052579	申请日期	2003.07.30
申请人		发明人
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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