OFF-STATE GATE-OXIDE FIELD REDUCTION IN CMOS,申请号KR19980701376-传众专利搜索

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发明名称	OFF-STATE GATE-OXIDE FIELD REDUCTION IN CMOS
摘要
申请公布号	KR100468070(B1)	申请公布日期	2005.05.16
申请号	KR19980701376	申请日期	1998.02.25
申请人		发明人
分类号	H01L29/49;(IPC1-7):H01L29/49	主分类号	H01L29/49
代理机构		代理人
主权项
地址

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