发明名称 RESIST FILM PROCESSING APPARATUS AND METHOD OF FORMING RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To prevent redeposition of material vaporized out of a processed substrate in heat-treating without changing the optimum temperature condition. SOLUTION: A resist film processing apparatus includes a resist forming means 105 for forming a chemically amplified resist film on the processed substrate. Exposure means 102 radiates energy beam on the chemical amplification type resist film to form an exposed region having a latent image pattern.Rotation correcting means ARM rotationally corrects the direction of the processed substrate. Heat-treating means 104 heats the chemically amplified resist film as flowing air in one direction along the processed substrate. Developing means 106 develops the chemically amplified resist film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123651(A) 申请公布日期 2005.05.12
申请号 JP20050009312 申请日期 2005.01.17
申请人 TOSHIBA CORP 发明人 KAWANO KENJI;ITO SHINICHI;HAYAZAKI KEI;SHIOBARA HIDESHI;KAWAMURA DAISUKE
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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