发明名称 |
RESIST FILM PROCESSING APPARATUS AND METHOD OF FORMING RESIST PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To prevent redeposition of material vaporized out of a processed substrate in heat-treating without changing the optimum temperature condition. SOLUTION: A resist film processing apparatus includes a resist forming means 105 for forming a chemically amplified resist film on the processed substrate. Exposure means 102 radiates energy beam on the chemical amplification type resist film to form an exposed region having a latent image pattern.Rotation correcting means ARM rotationally corrects the direction of the processed substrate. Heat-treating means 104 heats the chemically amplified resist film as flowing air in one direction along the processed substrate. Developing means 106 develops the chemically amplified resist film. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005123651(A) |
申请公布日期 |
2005.05.12 |
申请号 |
JP20050009312 |
申请日期 |
2005.01.17 |
申请人 |
TOSHIBA CORP |
发明人 |
KAWANO KENJI;ITO SHINICHI;HAYAZAKI KEI;SHIOBARA HIDESHI;KAWAMURA DAISUKE |
分类号 |
G03F7/38;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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