| 摘要 |
1,029,613. Semi-conductor devices. SIEMENS - SCHUCKERTWERKE A.G. March 25, 1963 [March 24, 1962], No. 11792/63. Heading H1K. A controllable PNPN semi-conductor device (Fig. 1) comprises a base-plate 1 forming a first main electrode supporting a disc-shaped unit 3 including an auxiliary molybdenum plate 3a carrying the semi-conductor element 3b (prepared as a sequence of four layers of alternate respective types of conductivity from weakly P-conducting silicon) against which a second main electrode 4 having a cut-away portion 6 (also Fig. 2, not shown) is urged by a connection member 18 under the action of dished springs 19 and for controlling conduction between the main electrodes a control electrode 5 is urged against the element 3b in the cut-away portion 6 by a connection member 23 under the action of a spring 24. The connection members are guided in conduits in an insulating support 21 and connected by current leads 17, 17a to output conductors via respective metal sleeves 10, 9 set in a glass closure member 8 of the tubular metal container 7. In a modification the connection member 18 is formed as a plurality of elements each of which is urged against electrode 4 by a respective helical spring (Figs. 3 and 5, not shown) and in a variant of this modification the insulating support for the connection members is formed with an edge portion bearing against a peripheral zone of the semi-conductor carrier plate and against which it is urged by means of a 'dished spring (Fig. 4, not shown). The Specification gives details of the manner in which the devices may be assembled. |
