发明名称 |
Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device |
摘要 |
A method and apparatus for providing magnetostriction control in a free layer of a magnetic memory device is disclosed. The same target compositions for the free layers may be used, but the relative thickness values are modified to obtain a desired magnetostriction without a change in the magenetoristance ratio, DeltaR/R.
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申请公布号 |
US2005099740(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20030712168 |
申请日期 |
2003.11.12 |
申请人 |
HITACHI GLOBAL TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
FREITAG JAMES M.;PINARBASI MUSTAFA M. |
分类号 |
G11B5/00;G11B5/127;G11B5/33;G11B5/39;H01F10/32;H01F41/30;H01L43/08;(IPC1-7):G11B5/33 |
主分类号 |
G11B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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