Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride Crystal

摘要

Affords Group III nitride crystals whose crystal growth rate is extensive, methods of their manufacture, and equipment for manufacturing such Group III nitride crystals. The manufacturing methods include: a melt-formation step, within a reaction vessel ( 21 ), of forming around a seed crystal ( 2 ) a melt ( 1 ) containing at least a Group III element and a catalyst; and a crystal-growth step of supplying a nitrogen-containing substance ( 3 ) to the melt ( 1 ) to grow a Group III nitride crystal ( 4 ) onto the seed crystal ( 2 ); characterized in controlling temperature so that in the crystal-growth step, the temperature of the melt ( 1 ) lowers from the interface ( 13 ) between the melt ( 1 ) and the nitrogen-containing substance ( 3 ), through to the interface ( 12 ) between the melt ( 1 ) and the seed crystal ( 2 ) or to the interface ( 14 ) between the melt ( 1 ) and the Group III nitride crystal ( 4 ) having grown onto the seed crystal ( 2 ).