| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To remove efficiently a film, such as varied insulating layer formed on a single crystal silicon and a work-distorted layer near a single crystal silicon substrate when recycling a silicon single crystal substrate used in manufacturing a semiconductor device, for a silicon single crystal substrate for use in a solar battery and a monitor wafer. <P>SOLUTION: A film layer is crushed by a physical impact, such as a sand blast at first, and after removing the crushed film, the remainder of the film and the work-distorted layer of the single crystal silicon surface are removed by exposing them in a mixed liquid of fluorinated acid and nitric acid. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
