| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrically programmable nonvolatile memory cell technique by which nonvolatile memory cells, that can be operated under a low voltage and can be subjected to multiprogramming and/or respectively can store one or more bits, can be manufactured by using a process which is comparable to a standard CMOS logic manufacturing technique. <P>SOLUTION: A method of programming memory cells is based on the loading of stresses to the memory cells. Each memory cell is provided with a first electrode 10, a second electrode 12, and an internal electrode layer 11 which is constituted so that its characteristics may progressively change. The method includes a confirming step of indicating the characteristic value of a selected memory cell by generating the signal of the current of the cell. The signal is compared with a reference signal for confirming the programming of desired data. Each memory cell can be subjected to multiprogramming by progressively changing the characteristics of the cell. The multiprogramming can make one or more programming in a single cell without performing any erasing operation. Therefore, the multiprogramming can be made in the single cell and, at the same time, both the programming of multiple bits and temporal multiprogramming can be accomplished. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
