发明名称 |
Methods of fabricating semiconductor devices |
摘要 |
Methods of fabricating semiconductor devices are disclosed. One example method includes forming a gate oxide and a gate electrode on a semiconductor substrate; performing a first ion implantation process for the formation of an LDD (lightly doped drain) region in the substrate; forming spacers on the sidewalls of the gate electrode; performing a second ion implantation process for the formation of a junction region in the substrate using the spacers as mask; forming a trench for device isolation by removing selectively the top portion of the substrate between the spacers; forming a sidewall oxide layer on the resulting substrate; forming a diffusion barrier on the sidewall oxide layer; depositing a gap filling insulation layer over the diffusion barrier; planarizing the gap filling insulating layer; and removing selectively some part of the gap filling insulation layer to form contact holes.
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申请公布号 |
US2005101092(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20030747602 |
申请日期 |
2003.12.29 |
申请人 |
HAN CHANG H.;KEUM DONG Y. |
发明人 |
HAN CHANG H.;KEUM DONG Y. |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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