NITROGEN-DOPED SILICON SINGLE CRYSTAL WAFER HAVING FEW DEFECTS AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal wafer consisting of an N-region where neither V-rich region nor I-rich region is present and the defect density is extremely low in the entire surface of the crystal produced by the CZ method, under the condition that can be controlled easily in a wide range, while maintaining high yield and high productivity. SOLUTION: When a silicon single crystal is grown in accordance with the CZ method, the method for producing the silicon single crystal wafer comprises pulling the silicon single crystal while doping nitrogen under such a condition that the entire surface of the crystal becomes the N-region. Concretely, in the case when the crystal is pulled in the N-region in a defect distribution chart which shows a defect distribution and in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/°C×min), wherein F is a pulling rate (mm/min) and G is an average intra-crystal temperature gradient (°C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400°C, the crystal is pulled while doping nitrogen. COPYRIGHT: (C)2005,JPO&NCIPI