METHOD FOR SELF- SUPPORTED TRANSFER OF A FINE LAYER BY PULSATION AFTER IMPLANTATION OR CO-IMPLANTATION

摘要

The invention relates to a method for self-supported transfer of a fine layer, wherein: at least one species of ions is implanted in a source-substrate at a given depth in relation to the surface of the source-substrate according to a certain dosage; a stiffener, which is in intimate contact with the source-substrate, is applied; said source-substrate undergoes heat treatment at a given temperature during a given period of time in order to create an embrittled, buried area substantially at said given depth without causing the fine layer to become thermally detached; a controlled energy pulse is applied to the source-substrate in a temporally localized manner in order to cause self-supported detachment of a fine layer which is defined between the surface and the embrittled buried layer in relation to the rest of the source-substrate.