发明名称 METHOD OF CLEANING AND DRYING WAFER, METHOD OF DRYING WAFER, WAFER CLEANING/DRYING DEVICE, WAFER DRYING DEVICE, METHOD AND DEVICE FOR CMP, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a wafer cleaning/drying device that is safe and, at the same time, can make waste solutions to be treated easily. SOLUTION: Since an HFE can be blown upon the whole surface of a wafer 3 by swinging an upper-surface nozzle 4 while the wafer 3 is rotated, foreign matters left on the top surface of the wafer 3, particularly, particles and metal powder left in the recessed section of the wafer 3 are removed from the surface of the wafer 3 in a state where the particles and metal powder are blown away by the forces of the HFE and nitrogen. At the same time, the film thickness of water adhering to the top surface of the wafer 3 is reduced and, at the same time, the water does not remain as water drops, because the water is reduced in surface tension by the action of the HFE. Then the water is replaced with the HFE and removed from the top surface of the wafer 3 by a centrifugal force. When the blowing of the HFE and nitrogen from the top-surface nozzle 4 is stopped in this state, a thin HFE film is formed on the top surface of the wafer. However, since the evaporation rate of the HFE is high, the HFE disappears in a short time through evaporation and the top surface of the wafer 3 is dried. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123218(A) 申请公布日期 2005.05.12
申请号 JP20030353121 申请日期 2003.10.14
申请人 NIKON CORP 发明人 SATO JUN;ONO HIDEMI
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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