发明名称 Method of forming local interconnect barrier layers
摘要 In a barrier formation process, an adhesion layer of refractory metal is deposited on sidewalls and bottom portions of a trench, and, subsequently, a nitride layer of the refractory metal is formed on the adhesion layer. After forming the nitride layer, the substrate is subjected to a heat treatment in a nitrogen-containing atmosphere to further convert residual refractory metal into nitride, thereby improving the barrier properties of the nitride layer in a subsequent process for filling in a contact metal, such as tungsten.
申请公布号 US2005101120(A1) 申请公布日期 2005.05.12
申请号 US20030400212 申请日期 2003.03.27
申请人 HAUSE FRED;BURBACH GERT;KAHLERT VOLKER 发明人 HAUSE FRED;BURBACH GERT;KAHLERT VOLKER
分类号 H01L21/768;(IPC1-7):H01L21/44;H01L21/476 主分类号 H01L21/768
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