| 摘要 |
PURPOSE: A reverse-pyramidal flip chip for high-output LED is provided to reduce the traveling distance of photon and the loss of light by forming a section of high-output LED with a shape of reverse pyramid. CONSTITUTION: A reverse-pyramidal flip chip for high-output LED includes a reverse-pyramidal semiconductor layer(312), a heat sink(304), and a sub mount(300). A reflective layer is formed by coating both sides of the reverse pyramid type semiconductor layer(312). Both sides and a bottom face of the reverse pyramid type semiconductor layer are surrounded by the heat sink(304). The sub mount(300) is used for receiving the heat sink. The semiconductor layer is formed by stacking an n-type layer(309), an active layer(303), and a p-type layer(302) on a sapphire substrate(307), forming an n-type electrode(306) and a p-type electrode(301), and depositing a solder metal layer(308) thereon. |
