SINGLE CRYSTAL, SINGLE CRYSTAL WAFER, EPITAXIAL WAFER AND METHOD OF GROWING SINGLE CRYSTAL

摘要

A single crystal obtained by the single crystal pull technique, characterized in that nonuniform stripe spacings introduced in the single crystal due to temperature variation of the crystal melt at the time of crystal growth are controlled; and a method of growing a single crystal according to the single crystal pull technique, characterized in that the single crystal is grown while controlling the growth rate and/or temperature variation cycle so that V x F / sin Theta, wherein V represents the growth rate (mm/min) during the growth of single crystal, F represents the temperature variation cycle (min) of crystal melt and Theta represents the angle of crystal growth interface against horizontal plane, falls within a given range. The above single crystal and method of growing the single crystal enable improving nanotopology characteristics from the viewpoint differing from wafer surface working conditions and enable cutting out a wafer that is excellent in nanotopology characteristics, especially nanotopology characteristics at measuring of 2 mm x 2 mm square.