发明名称 |
METHOD AND APPARATUS FOR PROVIDING GAS TO A PROCESSING CHAMBER |
摘要 |
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities. |
申请公布号 |
EP1529125(A2) |
申请公布日期 |
2005.05.11 |
申请号 |
EP20030764722 |
申请日期 |
2003.07.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GANGULI, SESHADRI;CHEN, LING;KU, VINCENT, W. |
分类号 |
C23C16/18;C23C16/34;C23C16/44;C23C16/448;C23C16/455;H01L21/31;(IPC1-7):C23C16/448;H01L21/00;B01D7/00 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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