发明名称 Under-bump-metallurgy layer for improving adhesion
摘要 An under-bump-metallurgy layer is provided. The under-bump-metallurgy layer is formed over the contact pad of a chip and a welding lump is formed over the under-ball-metallurgy layer. The under-bump-metallurgy layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is directly formed over the contact pad. The barrier layer made from a material such as nickel-vanadium alloy is formed over the adhesion layer. The wettable layer made from a material such as copper is formed over the barrier layer. The wettable layer has an overall thickness that ranges from about 3 mum to about 8 mum.
申请公布号 US6891274(B2) 申请公布日期 2005.05.10
申请号 US20030604794 申请日期 2003.08.18
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;WU JENG-DA;CHANG CHIH-HUANG;CHENG PO-JEN
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L29/40;H01L23/52 主分类号 H01L21/60
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