发明名称 |
Under-bump-metallurgy layer for improving adhesion |
摘要 |
An under-bump-metallurgy layer is provided. The under-bump-metallurgy layer is formed over the contact pad of a chip and a welding lump is formed over the under-ball-metallurgy layer. The under-bump-metallurgy layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is directly formed over the contact pad. The barrier layer made from a material such as nickel-vanadium alloy is formed over the adhesion layer. The wettable layer made from a material such as copper is formed over the barrier layer. The wettable layer has an overall thickness that ranges from about 3 mum to about 8 mum.
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申请公布号 |
US6891274(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20030604794 |
申请日期 |
2003.08.18 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
CHEN WILLIAM TZE-YOU;TONG HO-MING;LEE CHUN-CHI;TAO SU;WU JENG-DA;CHANG CHIH-HUANG;CHENG PO-JEN |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L29/40;H01L23/52 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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