发明名称 Nonvolatile memory device with double serial/parallel communication interface
摘要 A nonvolatile memory device is operable in a serial mode and in a parallel mode. The architecture of the nonvolatile memory device is based upon the structure already present in a standard memory, but includes certain modifications. These modifications include the addition of a timing state machine for the various memory access phases (i.e., writing and reading data), and the addition of an internal bus and related logic circuits for disabling the internal address bus of the standard memory when the nonvolatile memory device operates in the serial mode.
申请公布号 US6892269(B2) 申请公布日期 2005.05.10
申请号 US20020271352 申请日期 2002.10.15
申请人 STMICROELECTRONICS S.R.L. 发明人 POLIZZI SALVATORE;POLI SALVATORE;PERRONI MAURIZIO
分类号 G11C7/10;G11C16/08;G11C16/26;(IPC1-7):G06F12/00 主分类号 G11C7/10
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