Magneto-resistive device with a magnetic multilayer structure

摘要

A robust GMR or TMR effect type multilayer structure comprises a free and a pinned ferromagnetic layer, with a wide magnetic field range as required, for example in automotive applications. An odd number of non-adjacent ferromagnetic layers is used in an exchange-biased Artificial Anti-Ferromagnet as the pinned layer, and the exchange biasing layer is made of an IrMn type material.