发明名称 |
ELECTROPLATING COMPOSITIONS AND METHODS FOR ELECTROPLATING |
摘要 |
Disclosed are electroplating compositions and methods for filling recessed microstructures of a microelectronic workpiece, such as a semiconductor wafer, with metallization. The electroplating compositions may comprise a mixture of copper and sulfuric acid wherein the ratio of copper concentration to sulfuric acid concentration is equal to from about 0.3 to about 0.8 g/11 (grams per liter of solution). The disclosed electroplating compositions may also comprise a mixture of copperand sulfuric acid wherein the copper concentration is near its solubility limit when the sulftiric acid concentration is from about 65 to about 150 g/L. Such electroplating compositions may also include conventional additives, such as accelerators, suppressors, halides and/or levelers. Methods for electrochemically depositing conductive materials in features, such as trenches and/or contact holes formed on semiconductor workpieces are disclosed, including methods suited for use in multiple anode reactors using the disclosed electroplating solutions. |
申请公布号 |
WO2005040459(A2) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004US33229 |
申请日期 |
2004.10.08 |
申请人 |
SEMITOOL, INC.;KLOCKE, JOHN, L.;CHEN, LINLIN |
发明人 |
KLOCKE, JOHN, L.;CHEN, LINLIN |
分类号 |
C25D;C25D3/38;C25D5/48;C25D7/12;H01L21/288;H01L21/768 |
主分类号 |
C25D |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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