发明名称 THIN FILM DIODE PANEL FOR TRANS-REFLECTECTIVE LIQUID CRYSTAL DISPLAY
摘要 <p>A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.</p>
申请公布号 WO2005040906(A1) 申请公布日期 2005.05.06
申请号 WO2004KR02749 申请日期 2004.10.29
申请人 SAMSUNG ELECTRONICS CO., LTD.;CHAI, CHONG-CHUL;SHIN, KYOUNG-JU;OH, JOON-HAK;HONG, SUNG-JIN;KIM, JIN-HONG 发明人 CHAI, CHONG-CHUL;SHIN, KYOUNG-JU;OH, JOON-HAK;HONG, SUNG-JIN;KIM, JIN-HONG
分类号 G02F1/1335;G02F1/1362;G02F1/1365;(IPC1-7):G02F1/136 主分类号 G02F1/1335
代理机构 代理人
主权项
地址