发明名称 |
ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS |
摘要 |
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer. |
申请公布号 |
WO2004113585(A3) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004US19417 |
申请日期 |
2004.06.18 |
申请人 |
APPLIED MATERIALS, INC.;CHUNG, HUA;WANG, RONGJUN;MAITY, NIRMALYA |
发明人 |
WANG, RONGJUN;MAITY, NIRMALYA |
分类号 |
C23C16/02;C23C16/14;C23C16/44;C23C16/455;H01L21/28;H01L21/285;H01L21/44;H01L21/4763;H01L21/768 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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