发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE |
摘要 |
A semiconductor substrate (100) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a high temperature, forming a surface protection layer for blocking oxygen on the major surface, performing annealing, and then stripping off the mask and the surface protection layer. A silicon dioxide layer (102) has a first top surface (102a) corresponding to an area where the mask has not existed and having a relatively long distance from the major surface (100a), and a second top surface (102b) corresponding to an area where the mask has existed and having a relatively short distance from the major surface (100a). As this major surface (100a) is polished by a predetermined quantity, a semiconductor substrate is provided in which only a part of a single-crystal silicon substrate is a SOI substrate. |
申请公布号 |
WO2005041292(A1) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004JP16188 |
申请日期 |
2004.10.25 |
申请人 |
SONY CORPORATION;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;KISHIMA, KOICHIRO;KOONATH, PRAKASH |
发明人 |
KISHIMA, KOICHIRO;KOONATH, PRAKASH |
分类号 |
H01L21/266;H01L21/762 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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