发明名称 |
A METHOD CIRCUIT AND SYSTEM FOR READ ERROR DETECTION IN A NON-VOLATILE MEMORY ARRAY |
摘要 |
The present invention is a method, circuit and system for determining a reference voltage to be used in reading cells programmed to a given program state. Some embodiments of the present invention relate to a system, method and circuit for establishing a set of operating reference cells to be used in operating (e.g. reading) cells in a NVM block or array. As part of the present invention, at least a subset of cells of the NVM block or array may be read and the number of cells found at a given state associated with the array may be compared to one or more check sum values obtained during programming of the at least a subset of cells. A Read Verify threshold reference voltage associated with the given program state or associated with an adjacent state may be adjusted based on the result of the comparison. |
申请公布号 |
WO2005041108(A2) |
申请公布日期 |
2005.05.06 |
申请号 |
WO2004IL00983 |
申请日期 |
2004.10.27 |
申请人 |
SAIFUN SEMICONDUCTORS LTD.;COHEN, GUY |
发明人 |
COHEN, GUY |
分类号 |
G06K;G11C11/56;G11C16/04;G11C16/06;G11C16/28;G11C16/34;G11C17/00 |
主分类号 |
G06K |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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