发明名称 |
Memory device having a transistor and one resistant element as a storing means and method for driving the memory device |
摘要 |
A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data "0" or "1" is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.
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申请公布号 |
US2005095775(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040995116 |
申请日期 |
2004.11.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO IN-KYEONG;SEO SUN-AE;KIM HYUN-JO |
分类号 |
H01L27/10;G11C11/401;G11C11/404;G11C16/04;H01L21/00;H01L21/822;H01L21/8246;H01L27/112;H01L29/792;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L49/02;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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