发明名称 |
Low K dielectric surface damage control |
摘要 |
A method of removing a silicon nitride or a nitride-based bottom etch stop layer in a copper damascene structure by etching the bottom etch stop layer using a high density, high radical concentration plasma containing fluorine and oxygen to minimize back sputtering of copper underlying the bottom etch stop layer and surface roughening of the low-k interlayer dielectric caused by the plasma.
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申请公布号 |
US2005095869(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20030701825 |
申请日期 |
2003.11.05 |
申请人 |
TAO HUN-JAN;CHEN RYAN C.;LIANG MONG-SONG |
发明人 |
TAO HUN-JAN;CHEN RYAN C.;LIANG MONG-SONG |
分类号 |
H01L21/302;H01L21/311;H01L21/461;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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