| 摘要 |
A processing gas fed from a gas feed pipe ( 8 ) through a gas introducing port ( 9 ) flows first into an outer annular gas flow channel ( 20 a), where it is circumferentially diffused, and then into an inner annular gas flow channel ( 20 b) via a passageway ( 23 ), and from this inner annular gas flow channel ( 20 b) it flows into a gas diffusion gap ( 7 ) in the back surface of a shower head ( 6 ) via a gas feed hole 25. Thereafter, the processing gas is diffused in the gas diffusion gap ( 7 ) and delivered from gas delivery holes ( 5 ) to a semiconductor wafer (W). This makes it possible to improve the uniformity of in-plane process, as compared with the prior art, and to make a uniform process.
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