发明名称 Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates
摘要 A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.
申请公布号 US2005093100(A1) 申请公布日期 2005.05.05
申请号 US20030700085 申请日期 2003.11.03
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHEN TZE-CHIANG;COHEN GUY M.;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.
分类号 H01L21/762;H01L27/12;H01L27/144;H01L31/0232;H01L31/028;H01L31/0352;H01L31/105;H01L31/18;(IPC1-7):H01L31/117 主分类号 H01L21/762
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