| 摘要 |
A magnetoresistive device comprises: a first shield layer and a second shield layer disposed at a specific distance from each other; an MR element disposed between the first shield layer and the second shield layer; and an underlying layer disposed between the first shield layer and the MR element. The underlying layer, the MR element and the second shield layer are stacked on the first shield layer. The underlying layer includes: a first layer having a bottom surface that is in contact with the first shield layer; and a second layer having a bottom surface that is in contact with a top surface of the first layer and having a top surface that is in contact with the MR element. The first layer is made of a material including at least one of Ta, Ti, W, Hf and Y. The second layer is made of an alloy including Ni and Cr.
|
