发明名称 Process for strengthening semiconductor substrates following thinning
摘要 A semiconductor wafer having a high degree of thinness and exhibiting an enhanced strength state. A layer of tenacious reinforcement material is disposed over a back side of the wafer while in a rough state from backgrinding without prior, conventional polishing or plasma etching of the back side. The thin layer or film of reinforcement material fills grooves, fractures and scratches in the back side of the wafer, enhance the rigidity of the wafer and provide a planar, smooth, back side surface layer. The reinforcement material counteracts internal stresses of the wafer tending to warp, crack and propagate lattice defects in the wafer. The reinforcement material may also be configured to act as a die attach adhesive, may provide an ionic barrier, and may remain as part of the packaging for semiconductor dice singulated from the wafer.
申请公布号 US2005095812(A1) 申请公布日期 2005.05.05
申请号 US20040981073 申请日期 2004.11.04
申请人 DERDERIAN JAMES M.;DRANEY NATHAN R. 发明人 DERDERIAN JAMES M.;DRANEY NATHAN R.
分类号 H01L21/00;H01L21/06;H01L21/30;H01L21/44;H01L21/46;H01L21/68;H01L21/78;H01L23/00;H01L23/28;H01L23/31;(IPC1-7):H01L21/30 主分类号 H01L21/00
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