发明名称 Nonvolatile semiconductor memory
摘要 A nonvolatile semiconductor memory includes: a memory sub array including a memory cell unit configured with a memory cell transistor and a select transistor connected in series; a control gate line driver including a control gate line driver transistor connected to a control gate line of the memory cell transistor; and a select transistor gate line driver including a select gate line driver transistor connected to a select gate line of the select transistor. A thickness of a gate insulator of the control gate line driver transistor is thicker than that of the select gate line driver transistor.
申请公布号 US2005094431(A1) 申请公布日期 2005.05.05
申请号 US20040948295 申请日期 2004.09.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO ATSUHIRO;SHIROTA RIICHIRO;SUGIMAE KIKUKO;SAKUI KOJI
分类号 G11C16/06;G11C16/04;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/00 主分类号 G11C16/06
代理机构 代理人
主权项
地址
您可能感兴趣的专利