发明名称 |
Nonvolatile semiconductor memory |
摘要 |
A nonvolatile semiconductor memory includes: a memory sub array including a memory cell unit configured with a memory cell transistor and a select transistor connected in series; a control gate line driver including a control gate line driver transistor connected to a control gate line of the memory cell transistor; and a select transistor gate line driver including a select gate line driver transistor connected to a select gate line of the select transistor. A thickness of a gate insulator of the control gate line driver transistor is thicker than that of the select gate line driver transistor.
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申请公布号 |
US2005094431(A1) |
申请公布日期 |
2005.05.05 |
申请号 |
US20040948295 |
申请日期 |
2004.09.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO ATSUHIRO;SHIROTA RIICHIRO;SUGIMAE KIKUKO;SAKUI KOJI |
分类号 |
G11C16/06;G11C16/04;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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