Non-volatile semiconductor memory device, electronic card and electronic device

摘要

A non-volatile semiconductor memory device operative to erase data on a block basis is provided. Each of blocks includes a plurality of NAND cells each having one or more electrically erasable programmable memory cells and selection transistors arranged at both ends thereof. The memory device comprises a plurality of block groups each consisting of the blocks grouped under the number of the memory cells configuring the NAND cell, which is the same as others in one block group and different from those in other block groups. A row selector is arranged to select the memory cells located on the same row in each block in the plurality of block groups. Neighbors of the blocks individually include the selection transistors not shared.