发明名称 Integrated semiconductor device with stabilized conductive lines
摘要 <p>An integrated semiconductor circuit arrangement includes conductor paths (11-5;22) extending in at least two different planes, in which in at least one of the planes the conductor paths (11-5) are provided in close proximity, and mainly parallel to one another. The conductor paths (11-5) are underlaid at critical points determined by their layout, by a dummy-contact (16-20). The dummy-contacts (16-20) are provided specifically at critical points, which are determined by an interruption of two closely - adjacent, parallel conductor paths. More specifically, the conductor paths have a width of 150 - 250 nm, with the distance between the conductor paths amounting to 130 - 180 nm.</p>
申请公布号 EP1030367(B1) 申请公布日期 2005.05.04
申请号 EP20000102589 申请日期 2000.02.07
申请人 INFINEON TECHNOLOGIES AG 发明人 FEURLE, ROBERT;SCHNEIDER, HELMUT
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L23/528;(IPC1-7):H01L23/522 主分类号 H01L21/302
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