发明名称 Semiconductor memory device and its testing method
摘要 A semiconductor memory device is of a bank switching type having a plurality of memory array banks provided in a memory chip which can be switched from one to another for storage operation. The semiconductor memory device includes: a plurality of memory arrays in the memory array banks; an input/output circuit for transmitting information data between the memory arrays and the outside; a data bus for connecting between the memory arrays and the input/output circuit; and N-channel transistors provided across the data bus. The data bus consists of a plurality of adjacent lines. Each of N-channel transistors is connected at their drain to the corresponding lines of the data bus while at their source to the ground. When a multi-bit test is commenced for writing and reading data on the memory arrays, the N-channel transistors are turned on to connect the lines of the data bus to the ground.
申请公布号 US6888774(B2) 申请公布日期 2005.05.03
申请号 US20020224499 申请日期 2002.08.21
申请人 MITSUBISHI ELECTRIC ENGINEERING COMPANY LIMITED 发明人 SUZUKI TAKANOBU;TSURUDA TAMAKI;HAYASHI KATSUSHIGE
分类号 G01R31/28;G11C11/401;G11C11/409;G11C29/00;G11C29/28;G11C29/34;(IPC1-7):G11C8/00 主分类号 G01R31/28
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