发明名称 |
Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereof |
摘要 |
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.
|
申请公布号 |
US6887783(B2) |
申请公布日期 |
2005.05.03 |
申请号 |
US20030650890 |
申请日期 |
2003.08.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
CHEN TZE-CHIANG;ENGEL BRETT H.;FITZSIMMONS JOHN A.;KANE TERENCE;LUSTIG NAFTALL E.;MCDONALD ANN;MCGAHAY VINCENT;SEO SOON-CHEON;STAMPER ANTHONY K.;WANG YUN YU;KALTALIOGLU ERDEM |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|