发明名称 Semiconductor laser
摘要 The present invention provides a short resonator laser capable of high-speed operation with a low threshold value current and an element structure realizing a wavelength changeable laser having an excellent wavelength stability. A laser resonator waveguide is formed in such a manner that its lateral width is set to a wide value allowing lateral-multi mode at a part or the entire portion of the waveguide. This enables enhancement of a laser gain and reduction of electric resistance and thermal resistance while keeping the aforementioned characteristics of the short resonator laser. Here, by using self-focusing effect as a result of multi-mode interference effect, it is possible to reduce the mode conversion loss in the laser resonator and the light intensity distribution at the laser emitting end becomes a single-hill lowest order mode. Thus, it is possible to obtain a structure appropriate for connection with an optical fiber.
申请公布号 US6888869(B2) 申请公布日期 2005.05.03
申请号 US20020082338 申请日期 2002.02.26
申请人 HITACHI, LTD. 发明人 AOKI MASAHIRO
分类号 G02B6/14;G02B6/12;G02B6/122;H01S5/02;H01S5/026;H01S5/062;H01S5/0625;H01S5/10;H01S5/125;H01S5/22;(IPC1-7):H01S5/00 主分类号 G02B6/14
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