发明名称 |
Triple gate device having strained-silicon channel |
摘要 |
A three-dimensional Triple-Gate (Tri-gate) device having a three-sided strained silicon channel and superior drive current is provided. The Tri-gate device includes a composite fin structure consisting of a silicon germanium core and a three-sided strained silicon epitaxy layer grown from surface of said silicon germanium core. A gate strip wraps a channel portion of the composite fin structure. Two distal end portions of the composite fin structure not covered by the gate strip constitute source/drain regions of the Tri-gate device. A high quality gate insulating layer is interposed between the composite fin structure and the gate strip.
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申请公布号 |
US6888181(B1) |
申请公布日期 |
2005.05.03 |
申请号 |
US20040708694 |
申请日期 |
2004.03.18 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIAO WEN-SHIANG;SHIAU WEI-TSUN |
分类号 |
H01L21/336;H01L29/786;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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