| 发明名称 |
A SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance. |
| 申请公布号 |
KR100488311(B1) |
申请公布日期 |
2005.04.29 |
| 申请号 |
KR20020061395 |
申请日期 |
2002.10.09 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
FUKUNAGA, TAKESHI;KOYAMA, JUN;OHTANI, HISASHI;YAMAZAKI, SHUNPEI |
| 分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/8242;H01L21/84;H01L27/12;H01L29/04;H01L29/76;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
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