| 摘要 |
Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer ( 32 ) is formed on a Si substrate ( 30 ). On the lattice mismatching buffer layer ( 32 ), successively stacked are an n-type AlGaAs layer ( 14 ), a p-type AlGaAs layer ( 16 ), an n-type AlGaAs layer ( 18 ), and a p-type AlGaAs layer ( 20 ) in this order. On the AlGaAs layer ( 20 ) provided is an anode electrode ( 22 ), on the AlGaAs layer ( 18 ) a gate electrode ( 24 ), on the bottom surface of the GaAs substrate a cathode electrode ( 26 ).
|
