发明名称 |
Method of forming a metal pattern for a semiconductor device |
摘要 |
A method of forming a conductive pattern includes preparing a semiconductor substrate having a conductive pattern, forming an interlayer dielectric pattern having an opening exposing the conductive pattern on the semiconductor substrate, forming a metal layer on the interlayer dielectric pattern to fill the opening, wet etching the metal layer, and polishing the metal layer to form a metal pattern filling the opening. The wet etching is done such that a top surface of the interlayer dielectric pattern is not exposed.
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申请公布号 |
US2005090094(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040970297 |
申请日期 |
2004.10.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH JUN-HWAN;SON HONG-SEONG |
分类号 |
H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/823;H01L21/311;H01L21/476 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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