| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride based compound semiconductor device capable of performing free process designing and having an optimum device property, and a manufacturing method of the device. <P>SOLUTION: As suitable materials, a Pt/Rh layer, a Pt/Ir layer or an Rh layer is used as an electrode for a p-type gallium nitride based compound semiconductor, and an Al/Rh layer, an Al/Ir layer, an Al/Pd layer or an Al/Pt layer is used as an electrode for an n-type gallium nitride based compound semiconductor. For this reason, different from any material in a conventional technology, ohmic contact can be obtained without performing annealing, and a good gallium nitride based device can be formed. Thereby, it becomes possible to perform this device process by using low heat-resistant materials. Furthermore, there can be obtained such useful effects as to avoid the deterioration of the device property caused by a thermal hysteresis of high temperature treatment and to reduce the number of processes. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
