| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device of which luminance properties and drive voltage property are improved by improving transmittance of an electrode, as well as forming a proper ohmic contact, and its manufacturing method. <P>SOLUTION: There is provided a GaN-based semiconductor light-emitting device including a substrate for growing GaN based semiconductor substance, a lower clad layer which is formed on the substrate and made of first conductive GaN-based semiconductor substance, an active layer which is formed in a partial area of the lower clad layer and made of undoped GaN-based semiconductor substance, an upper clad layer formed on the active layer and made of second conductive GaN-based semiconductor substance, an alloy layer formed on the upper clad layer and made of a hydrogen-absorbing alloy. The luminance property of GaN-based semiconductor substance may be improved, and its ohmic resistance may be reduced, thereby, forming an ohmic contact with superior properties. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
