| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a bipolar transistor which can prevent the occurrence of defects in a manufactured transistor and can increase the operating speed thereof. SOLUTION: A semiconductor device has a structure where the contact area between a diffusion layer of the collector selectively implanted with ions and a base layer is reduced, and that polycrystalline silicon doped with second conductivity-type impurities is embedded in part of the bottom of polycrystalline silicon of the external base near the emitter which is in contact with the epitaxial base layer. In manufacturing the semiconductor device, after forming a cavity by etching an insulation film below the polycrystalline silicon of the external base, a polycrystalline silicon layer doped with second conductivity-type impurities is formed, and then is etched back to leave the polycrystalline silicon-doped with the second conductivity-type impurities in the cavity. COPYRIGHT: (C)2005,JPO&NCIPI
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