发明名称 |
Circuit arrangement for preparing core voltage from higher working voltage, includes p-channel FET connected between operating voltage terminal and core voltage terminal |
摘要 |
<p>A circuit arrangement of a working voltage converter for preparing a core voltage, is arranged chip-internally in the CMOS circuit which is provided with a working voltage terminal and a ground terminal. Between the operating voltage terminal (VDD ext) and the core voltage terminal (11) is connected a P-channel FET with source and drain terminals as a control transistor, and its gate is joined to the output of an op.amp. controlled by a reference voltage source and a voltage- or current-source is provided with its output forming a virtual ground, the potential of which is above the normal ground potential. An independent claim is included for a method for preparing a core voltage from a higher working voltage.</p> |
申请公布号 |
DE102004042130(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
DE20041042130 |
申请日期 |
2004.08.30 |
申请人 |
ZENTRUM MIKROELEKTRONIK DRESDEN AG |
发明人 |
SCADE, ANDREAS;ARSLANOV, DMITRI;WAETZOLD, MICHAEL;BUSCHBECK, STEFFEN |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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