发明名称 |
Strained Si/SiGe/SOI islands and processes of making same |
摘要 |
A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A thermal oxidation completes the vertical isolation by use of a minifield oxidation process. The recess is filled to form a shallow trench isolation structure. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device.
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申请公布号 |
US2005087842(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040979994 |
申请日期 |
2004.11.02 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD |
分类号 |
H01L21/336;H01L21/762;H01L21/8242;H01L29/10;H01L29/786;(IPC1-7):H01L31/032;H01L21/04 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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