| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory which can improve operation reliability. SOLUTION: The non-volatile semiconductor memory is equipped with a first semiconductor layer, a laminated-layer gate including a second semiconductor layer which is formed on the first semiconductor layer sandwiching an inter-gate dielectric film and is electrically connected with the first semiconductor layer, a first MOS(metal oxide semiconductor) transistor having a silicide layer formed on a surface of a source and the second semiconductor layer, a charge accumulating layer, a laminated-layer gate including a control gate which is formed on the charge accumulating layer sandwiching the inter-gate dielectric film, and a silicide layer which is formed on a surface of a drain and the control gate. The source includes a second MOS transistor connected with the drain of the first MOS transistor and a side wall dielectric film which is formed on a side wall of the laminated-layer gate of the first MOS transistor. The film thickness of the side wall dielectric film, which is formed on the side wall facing the source of the laminated-layer gate of the first MOS transistor, is larger than 1/2 of the interval between the laminated-layer gates of the first and second MOS transistors. COPYRIGHT: (C)2005,JPO&NCIPI
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