发明名称 |
Hard substrate wafer sawing process |
摘要 |
Die of high aspect ratio formed in a hard wafer substrate are sawed out without requiring tape, obtaining high die yields. Preliminary to sawing the semiconductor die ( 3 ) from a sapphire wafer ( 2 ), the wafer is joined ( 20 ) to a silicon carrier substrate ( 6 ) by a thermoplastic layer ( 4 ) forming a unitary sandwich-like assembly. Sawing the die from the wafer follows. The thermoplastic is removed, and the die may be removed individually ( 50 ) from the silicon carrier substrate. Thermoplastic produces a bond that holds the die in place against the shear force exerted by the saw and by the stream of coolant ( 30 ).
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申请公布号 |
US2005090076(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20030692390 |
申请日期 |
2003.10.22 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
BARSKY MICHAEL E.;WOJTOWICZ MICHAEL;SANDHU RAJINDER R. |
分类号 |
H01L21/301;H01L21/46;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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