| 摘要 |
<P>PROBLEM TO BE SOLVED: To transfer a bent part onto a resist with high accuracy. <P>SOLUTION: In a wiring pattern M112 having a bent part having locally different line width in a line system, the layout is divided into a rectangle pattern M114 having a large area and a node part M113 connecting the rectangle pattern, and M113 and M114 are separated by a slit S113 of ≤0.22×λ/NA dimension. The mask pattern is used to connect optical images in the process to form a continuous wiring pattern R113. Thus, the optical image of the corner of the rectangle part or of a critical part with the node, where conventionally deterioration in the transfer accuracy is significant can be improved. However, since an extremely low contrast part R114 is produced near the bent part, bias correction is carried out in a part B115 on the mask layout corresponding to the low contrast part to correct thinning of the pattern, so that the transfer accuracy in the bent part and its nearby region (R115) can be increased to much as possible. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
