| 发明名称 |
Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof |
| 摘要 |
A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
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| 申请公布号 |
US2005087831(A1) |
申请公布日期 |
2005.04.28 |
| 申请号 |
US20040986778 |
申请日期 |
2004.11.15 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI;SEKINE KATSUYUKI;SAITO YUJI |
| 分类号 |
H01L21/316;G11C11/16;H01L21/28;H01L21/318;H01L21/336;H01L21/8246;H01L21/8247;H01L27/12;H01L29/04;H01L29/49;H01L29/51;H01L29/786;H01L29/788;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/316 |
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