发明名称 |
Thin film forming apparatus cleaning method |
摘要 |
A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.
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申请公布号 |
US2005090123(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20030479718 |
申请日期 |
2003.12.05 |
申请人 |
NISHIMURA KAZUAKI;TOJO YUKIO;SPAULL PHILLIP;TAGO KENJI |
发明人 |
NISHIMURA KAZUAKI;TOJO YUKIO;SPAULL PHILLIP;TAGO KENJI |
分类号 |
C23C16/44;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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